DOI > 10.5291/ILL-DATA.5-21-1126

This proposal is publicly available since 01/31/2025

Title

O and Sn integration in the semiconductor ZnGeN2 - a complex structure-property relationship

Abstract

Zinc germanium nitride based semiconductors are a fascinating class of alternative solar absorbers. We propose to elucidate the consequences of Sn and O integration on the structural behaviour of these materials in order to understand their influence on the physical properties. This investigation will aid the directed synthesis of high-performing solar cells based on earth-abundant and low-toxic elements.

Experimental Report

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Data Citation

The recommended format for citing this dataset in a research publication is in the following format:

BRETERNITZ Joachim; SAVVIN Stanislav; SCHORR Susan and Zhenyu Wang. (2020). O and Sn integration in the semiconductor ZnGeN2 - a complex structure-property relationship. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-21-1126

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Metadata

Experiment Parameters

  • Environment temperature

    RT

  • Experiment energy

    1.594

Sample Parameters

  • Formula

    • Zn2-x[Ge0.8Sn0.2]O2-xN2
    • Zn2-x[Ge0.9Sn0.1]O1-xN2
    • Zn2-x[Ge0.6Sn0.4]O1-xN2
    • Zn2-x[Ge0.95Sn0.05]O1-xN2
    • Zn2-x[Ge0.85Sn0.15]O1-xN2
    • Zn2-xGeO1-xN2
    • Zn2-x(Sn,Ge)O1-xN2
    • Zn2-x[Sn0.5Ge0.5]O1-xN2
    • Zn2-x[Ge0.7Sn0.3]O1-xN2
    • Zn2-x[Ge0.75Sn0.25]O1-xN2
    • Zn2-x[Ge0.65Sn0.35]O1-xN2
    • Zn2-x[Ge0.55Sn0.45]O1-xN2

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