Crystal structure and structural disorder in Ge-containing quaternary chalcogenide semiconductors for photovoltaic applications
Kesterite-type based thin films solar cell technologies are mainly based on polycrystalline absorber layers. A promising low cost alternative technology uses Cu2ZnSn(S,Se)4 (CZTSSe) monograins (single crystals of 50-100 żm size) which are fixed in a polymer matrix to form a flexible solar cell. It is agreed in literature that large band tailing observed in Cu-based quaternary chalcogenide semiconductors causes voltage losses limiting the efficiency of the devices. The Cu/Zn disorder is discussed as a possible reason for this band tailing. The experimental determination of the order parameter Q which is a quantitative measure of the degree of Cu/Zn disorder requires a differentiation between the isoelectronic cations Cu+ and Zn2+. Introducing Ge and/or Mn, could be a way to avoid this disorder. We will perform a detailed structural investigation of Cu2Zn(GeySn1-y)(Se0.2S0.8)4 and Cu2MnGe(Se1-xSx)4 solid solutions, showing how structural properties and PV device performance parameters are correlated. These findings will pave the way to advanced band gap engineering methodology by cation and anion mutation.
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GURIEVA Galina; MATZDORFF David; RITTER Clemens and SCHORR Susan. (2023). Crystal structure and structural disorder in Ge-containing quaternary chalcogenide semiconductors for photovoltaic applications. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-23-801
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