Crystal structure of novel thermoelectric materials based on SnSe
Based upon recent results on SnSe, for which appealing thermoelectric properties have been described, we have developed several novel series of doped SnSe, namely Sn1-xMxSe (M= Pb, Sb, Ge) and SnSe1-xBx (B= Te). Preliminary thermoelectric properties measurements are extremely attractive: for instance, we found for Sn0.8Sb0.2Se a negative Seebeck coefficient, in contrast with the ptype parent SnSe compound. All the members of the novel series belong to the same structural type (defined in the Pnma space group). We aim to analyze the effect on the crystal structure of the diverse chemical dopings, in connection with their thermoelectric properties and to investigate their evolution across the phase transitions at about 820 K from the low-temperature structure (GeSe-type) to the high-temperature Cmcm structure, for which the highest ZT values have been measured. In the precedent experiment we studied Sb and Ge doping; in this continuation we aim to study Pb and In doping. Unreported change of sign of Seebeck is observed for Pb-doped samples, related to the structural phase transition.
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ALONSO Jose Antonio; FERNANDEZ DIAZ Maria Teresa and SERRANO Federico. (2016). Crystal structure of novel thermoelectric materials based on SnSe. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-24-579
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