Microscopic origin of the electric field induced magnetization reversal in hexaferrites
Magnetization switching by electric field holds great potential in realizing low energy dissipation magnetic random access memories and standby-power-free integrated circuits that rely on nonvolatile information encoded in the direction of magnetization. This effect, which has been realized in metals, semiconductors and multiferroic insulators, is interesting not only because of its technological importance, but also because it allows us to uncover novel properties of matter that are otherwise inaccessibl. This proposal aims to unveil the microscopic origin of the electric field induced magnetization sign switch (reversal) effect in hexaferrites.
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CAMPILLO Emma; BLACKBURN Elizabeth; CUBITT Robert; SHEN Lingjia and WHITE Jonathan. (2019). Microscopic origin of the electric field induced magnetization reversal in hexaferrites. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-42-486
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