Magnetization reversal in ferromagnetic III-Mn-V semiconductors prepared by ion implantation and pulsed laser melting
Mn-doped III-V semiconductors such as (Ga,Mn)As and (In,Mn)As have become the model materials in which to study phenomena of interest for semiconductor spintronics. In alternative to molecular beam epitaxy (MBE), a more versatile method for the synthesis of such alloys has been developed: ion implantation followed by pulsed laser melting (II-PLM). Using polarized neutron reflectivity, we propose to investigate the magnetization reversal mechansisms in several III-Mn-V alloys prepared by II-PLM. This will allow us to compare, at a very fundamental level, II-PLM (Ga,Mn)As to the better understood MBE-grown counterpart, and to advance our understanding of the correlation between magnetic anisotropy and magnetization reversal for different III-Mn-V alloys.
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PEREIRA Lino; COUET Sebastien; HOUBEN Kelly; TEMST Kristiaan; TREKELS Maarten; VAN BAEL MARGRIET; VANTOMME Andre and WILDES Andrew. (2013). Magnetization reversal in ferromagnetic III-Mn-V semiconductors prepared by ion implantation and pulsed laser melting. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-54-134
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