Neutron reflectometry of exotic epsilon-Fe2O3 thin films
The magnetic layers of various iron oxides on the GaN semiconductor surface are supposed to present interest from the point of view of potential use in design of novel (opto-) electronic and spintronic devices. In present work we propose to investigate exotic metastable iron oxide epsilon-Fe2O3 phase grown on GaN layer. This films exhibit interesting magnetic and electric properties, such as high coercivity at room temperature and ferroelectric behaviour. The magnetisation loops measured by SQUID leaving us to suggest the existence of two magnetic sublayers presented in the film. A pilot measurement of neutron reflectometry in zero magnetic field revealed the formation of 10 nm-thick interfacial layer between the iron oxide film and GaN. Now we want to obtain layer-specific magnetization loops by polarized neutron reflectometry to specify the origin of double-hysteresis behaviour. This knowledge will help us to improve the homogeneity of epsilon-Fe2O3 layers which are extremely promising for future applications.
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UKLEEV Victor; Chumakov A.; SAERBECK Thomas and VOROBIEV Alexei. (2017). Neutron reflectometry of exotic epsilon-Fe2O3 thin films. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-54-226
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