Magnetisation and diffusion depth profiles in ultrathin epitaxial YIG/GGG(111) layers for low-relaxation spin wave applications
Epitaxial growth of YIG / GGG (111) films exhibiting atomically flat step-and-terrace surface, sharp and flat interfaces, low coercivity, rectangular magnetization loops and low damping spin wave propagation has been achieved by means of pulsed laser deposition. However, our recent ferromagnetic resonance (FMR) and polarized neutron reflectometry (PNR) experiments have shown a 6 nm thick interface layer between YIG and GGG, suggesting migration of Ga atoms from the substrate across the interface. As seen from FMR, the thickness of this layer increases with the growth temperature indicating temperature-activated mechanism of migration. We propose to further elucidate this issue and explore the mechanisms of Gd and Ga migration by means of PNR. This knowledge is necessary to further optimize the YIG epitaxial growth technology aimed at creation of high-quality ultra-thin YIG layers for spintronics applications.
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UKLEEV Victor; CHERNYSHOV Dmitry; KOROVIN Alexander; SUKHANOV Aleksandr; SUTURIN Sergey and VOROBIEV Alexei. (2019). Magnetisation and diffusion depth profiles in ultrathin epitaxial YIG/GGG(111) layers for low-relaxation spin wave applications. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-54-288
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