Revealing the oxide substrate role in the switching mechanisms through oxygen diffusion deriven by electric field
Controlling the oxide interfaces is the key towards controlling the switching phenomenon and thus realizing functional devices. We found that oxide substrates can take active part in the redox process at the interface and may be even used to tune properties. Hence, our next goal is to control the switching phenomenon at Fe3O4 films by controlling the oxygen diffusion through interfaces. We have characterized our samples using different lab techniques, e.g. XRR, XRD, SQUID and GISAXS. Using SQUID, we observe the disappearance of Verwey transition, the characteristic temperature for Fe3O4, when applying a positive voltage. This indicates a change of oxygen content in the Fe3O4 phase to the insulator gamma-Fe2O3 phase. Thus, our next step is to measure in-situ the magnetic depth profiling during applied electric field using polarized neutron reflectivity.
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The recommended format for citing this dataset in a research publication is in the following format:
HAMED Mai Hussein; BEDNARSKI-MEINKE Connie; Alexandros Koutsioubas; PETRACIC Oleg; Asma; SAERBECK Thomas; SEIDEL Nadine and XU Yifan. (2023). Revealing the oxide substrate role in the switching mechanisms through oxygen diffusion deriven by electric field. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-54-402
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