DOI > 10.5291/ILL-DATA.6-05-962

This proposal is publicly available since 07/10/2020

Title

Time-resolved neutron reflectivity measurements for silver photo-diffusion into Ge-chalcogenide films

Abstract

Silver photo-diffusion into amorphous chalcogenide films has attracted much interest because of the potential applications such as non-volatile memory devices. So far, the diffusion kinetics has been studied by mainly Rutherford Backscattering and the studies revealed their unusual diffusion profile, in which silver concentration abruptly drops off at the interface. However, strong helium ion beam also induces silver diffusion and therefore, it is desirable to use in-situ techniques to exclude any assumptions on the photo-induced changes. Time-resolved X-ray/neutron reflectivity is a suitable technique to clarify the time evolutionary changes. Strong X-rays of synchrotron radiation can also induce silver diffusion and use of neutrons is safer and suitable approach to exclude the possibility of the changes by the probe beam. So far, we performed time-resolved neutron reflectivity measurements on BL17 (SHARAKU) in J-PARC and 30 second time-resolution has been achieved. In this proposal, we perform time-resolved neutron reflectivity on D17 in ILL and try to find much faster dynamics up to 6 second resolution, which is the possible shortest time-resolution with the instrument.

Experimental Report

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Data Citation

The recommended format for citing this dataset in a research publication is in the following format:

SAKAGUCHI Yoshifumi; CUBITT Robert and GUTFREUND Philipp. (2015). Time-resolved neutron reflectivity measurements for silver photo-diffusion into Ge-chalcogenide films. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.6-05-962

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Metadata

Experiment Parameters

  • Experiment energy

    2-20A
  • Experiment moment

    0.0008-1.0A
  • Experiment res energy

    5%
  • Experiment res moment

    5%

Sample Parameters

  • Formula

    • Ag film on silicon wafer
    • Ge-S film on silicon wafer
    • Ag/Ge-S films on silicon wafers