Study of the phase separation in GexTe100-x amorphous films
Storage density is a key-issue in the field of information storage. Storage densities in PC-RAM memories could be drastically increased thanks to phase-change materials that could offer the possibility of making multi-level cells. Changing its amorphized volume could systematically alter the cell resistance. This process requires, however, a stable amorphous state, i.e., a material with a time-independent resistance. This effect, commonly denoted as resistance drift, may cause severe data corruption over time and thus hampers the realization of multi-level phase change memories. We recently combined the amorphous state resistivity measurements to structural and thermal analyses in amorphous GexTe100-x films. Our results allow us to identify two singularities, which could be linked to a phase separation in films with x > 25 or x > 35 at.% Ge. In this context, we propose to extend the structural investigations of the Ge-Te system by exploring possible structural rearrangement using small angle neutron scattering (SANS). These measurements will help to understand the ageing of the Ge-Te films, which could be interesting in the operation mode of electrical memories.
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PIARRISTEGUY Andrea Alejandra; CRISTIGLIO Viviana; CUELLO Gabriel; ESCALIER Raphael and PRADEL Annie. (2018). Study of the phase separation in GexTe100-x amorphous films. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.6-05-990
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