DOI > 10.5291/ILL-DATA.7-01-350

This proposal is publicly available since 05/28/2018

Title

Volume effect on a correlated picture of lattice and electronic degrees of freedom of the narrow-gap semiconductor FeSi

Abstract

Abstract is not yet public

Experimental Report

The experimental report is not available to download

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Data Citation

The recommended format for citing this dataset in a research publication is in the following format:

SCHOBER Helmut; MITTAL Ranjan and ZBIRI Mohamed. (2013). Volume effect on a correlated picture of lattice and electronic degrees of freedom of the narrow-gap semiconductor FeSi. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.7-01-350

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Metadata

Experiment Parameters

  • Environment temperature

    IN6 (CO), IN4 (F)

  • Experiment energy

    Standard

  • Experiment moment

    Standard

  • Experiment res energy

    Standard

  • Experiment res moment

    Standard

Sample Parameters

  • Formula

    • FeSi
    • CoSi

  • Consistence

    powder

  • Mass

    10000

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