Neutron Scattering Study of Selective Infiltration Synthesis into Block Copolymer for Sub-10 nm Nanolithography Applications
Block copolymer (BCP) lithography addresses some issues high-lighted for next generation lithography - high pattern density over large areas. The self-assembled BCP Polystyrene-block-Maltoheptaose (PS4.5k-b-MH1.2k) has a bulk periodicity of 10 nm. Challenges in the sub-10 nm regime is achieving an etch mask to enable pattern transfer. By selectively infiltrating the Maltoheptaose part of the BCP with Alumina, a higher etch selectivity between blocks can be achieved. Investigation of the effect of number of sequential infiltration synthesis (SIS) cycles into PS-b-MH showed that the Alumina feature diameter increases with number of cycles. However, neither the infiltration mechanism nor the self-assembly type is clear. Therefore, a study of the infiltration process into PS-b-MH, as well as into Polystyrene and Maltoheptaose, using neutron reflectivity in air is proposed. The aim is to describe the Alumina growth, to determine if surface deposition or full infiltration is occurring, and to verify the selectivity between blocks. Furthermore, to identify any polymer wetting layer on top of the substrate. The results will contribute to development of next generation lithography.
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Anette Löfstrand; MOTHANDER Karolina and VOROBIEV Alexei. (2020). Neutron Scattering Study of Selective Infiltration Synthesis into Block Copolymer for Sub-10 nm Nanolithography Applications. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.CRG-2597