DOI > 10.5291/ILL-DATA.5-54-244

This proposal is publicly available since 06/12/2023

Title

Magnetism and structure of e-Fe2O3 films grown on gallium nitride buffer layer

Abstract

The e-Fe2O3 phase is ferrimagnetic metastable iron oxide phase with huge magnetocrystalline anisotropy responsible for coercivity values exceeding 2 T in the nanocrystalline form and 1 T in epitaxial film. Moreover, the phase transition to the incommensurate spin structure has been observed in nanocrystalline e-Fe2O3 samples, but not in thin films. Besides this e-Fe2O3 exhibits ferroelectric properties and magnetoelectric coupling. It has been recently shown, that single crystal ferrimagnetic, antiferromagnetic and multiferroic layers of various iron oxides including the exotic e-Fe2O3 can be controllably grown by pulsed laser deposition beam epitaxy on GaN (0001) on sapphire substrates. Due to the specific shape of magnetization loops we suppose the existence of interfacial layer between e-Fe2O3 and GaN. The first polarized neutron reflectometry experiments at D17 setup (ILL) revealed the formation of 10 nm-thick interfacial layer with reduced magnetization as well as chemical composition. We propose to continue this research and to perform the layer-resolved magnetometry measurements for the samples grown at different conditions as a function of temperature.

Experimental Report

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Data Citation

The recommended format for citing this dataset in a research publication is in the following format:

UKLEEV Victor; Chumakov A.; SAERBECK Thomas and VOROBIEV Alexei. (2018). Magnetism and structure of e-Fe2O3 films grown on gallium nitride buffer layer. Institut Laue-Langevin (ILL) doi:10.5291/ILL-DATA.5-54-244

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Metadata

Experiment Parameters

  • Environment temperature

    4K -- 300 K
  • Experiment energy

    4-16
  • Experiment moment

    0.01 -- 0.15 -1
  • Experiment res moment

    0.0005 -1

Sample Parameters

  • Formula

    • Fe2O3 / GaN/ Al2O3